Structure for use in a metal-insulator-metal capacitor
US11075261B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 7, 2019 |
| Grant date | Jul 27, 2021 |
| Priority date | — |
| Expiry date | Nov 7, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/696
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The disclosed technology relates to a structure for use in a metal-insulator-metal capacitor. In one aspect, the structure comprises a bottom electrode formed of a Ru layer. The Ru layer has a top surface characterized by a grazing incidence X-ray diffraction spectrum comprising a first intensity and a second intensity, the first intensity corresponding to a diffracting plane of Miller indices (0 0 2) being larger than the second intensity corresponding to a diffracting plane of Miller indices (1 0 1). The structure further comprises an interlayer on the top surface of the Ru layer, the interlayer being formed of an oxide of Sr and Ru having a cubic lattice structure, and a dielectric layer on the interlayer, the dielectric layer being formed of an oxide of Sr and Ti.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.