Compact electro-optical devices with laterally grown contact layers
US11075307B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 18, 2019 |
| Grant date | Jul 27, 2021 |
| Priority date | — |
| Expiry date | Jul 18, 2039 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02B2006/12138
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Embodiments of the invention are directed to a method of fabrication of an electro-optical device. A non-limiting example of the method relies on a waveguide. A trench is opened in the waveguide and a stack of optically active semiconductor materials is directly grown from a bottom wall of the trench and are stacked along a stacking direction that is perpendicular to a main plane of the waveguide. The stack is partly encapsulated in the waveguide, whereby a bottom layer of the stack is in direct contact with a waveguide core material, whereas upper portions of opposite, lateral sides of the stack are exposed. An insulating layer of material is deposited to cover exposed surfaces of the waveguide and structured to form a lateral growth template. Contact layers are laterally grown due to the lateral growth template formed. The contact layers can include an n-doped and p-doped contact layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.