Optoelectronic devices manufactured using different growth substrates

US11075313B2 · kind B2 · utility

Assignee

• Utica Leaseco, LLC · US

Inventors

• Nikhil Jain · San Diego, US
• Andrew J. RITENOUR · San Jose, US
• Ileana Rau · Cupertino, US
• Claudio Canizares · معلمی نژاد, US
• Lori D. Washington · Union City, US
• Gang He · Magnolia Trace, CA
• Brendan M. Kayes · Los Angeles, US

Key dates

• Filing date: Oct 18, 2019
• Grant date: Jul 27, 2021
• Expiry date: Oct 18, 2039

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02P70/50

Abstract

A growth structure having a lattice transition (or graded buffer) or an engineered growth structure with a desired lattice constant, different from a lattice constant of conventional substrates like GaAs, Si, Ge, InP, under a release layer or an etch stop layer is used as a seed crystal for growing optoelectronic devices. The optoelectronic device can be a photovoltaic device having one or more subcells (e.g., lattice-matched or lattice-mismatched subcells). The release layer can be removed using different processes to separate the optoelectronic device from the growth structure, which may be reused, or from the engineered growth structure. When using the etch stop layer, the growth structure or the engineered growth structure may be grinded or etched away. The engineered growth structure may be made from a layer transfer process between two wafers or from a ternary and/or a quaternary material. Methods for making the optoelectronic device are also described.