Method of producing a radiation-emitting component and radiation-emitting component
US11075323B2 · kind B2 · utility
0Cited by
1References
15Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 24, 2017 |
| Grant date | Jul 27, 2021 |
| Priority date | — |
| Expiry date | Apr 25, 2038 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/549
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of producing a radiation-emitting component includes: A) providing a dielectric layer that degrades against environmental influences; B) applying a first protective layer to the dielectric layer by an atomic layer deposition method, wherein the first protective layer includes elemental Si or in a compound; and C) applying a second protective layer to the first protective layer, the second protective layer including elemental Si, wherein a layer thickness of the first protective layer is less than or equal to 1 nm so that the first protective layer reduces or prevents a degradation of the dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.