Integrated circuit devices based on metal ion migration and methods of fabricating same
US11075337B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 4, 2019 |
| Grant date | Jul 27, 2021 |
| Priority date | — |
| Expiry date | Oct 5, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8833
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The disclosed technology generally relates to integrated circuit (IC) devices and more particularly to IC devices based on metal ion migration, and to manufacturing of the IC devices. In one aspect, a method of manufacturing an integrated electronic circuit, which includes at least one component based on metal ion migration and reduction, allows improved control of an amount of the metal which is incorporated into the component. This amount is produced from a metal supply layer and transferred into a container selectively with respect to the rest of the component. The container is configured as part of an electrolyte portion or active electrode in the final component. The method is compatible with two-dimensional and three-dimensional configurations of the component.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.