Thin film transistor and thin film transistor array and electronic device
US11075348B2 · kind B2 · utility
0Cited by
4References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 7, 2019 |
| Grant date | Jul 27, 2021 |
| Priority date | — |
| Expiry date | Sep 13, 2039 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/549
- WIPO fieldMacromolecular chemistry, polymers
- WIPO sectorChemistry
Abstract
Disclosed are a thin film transistor includes a gate electrode, an active layer including a semiconductor material and a first elastomer, a gate insulator between the gate electrode and the active layer, and a source electrode and a drain electrode electrically connected to the active layer, wherein each of the semiconductor material and the first elastomer has a hydrogen bondable moiety, and the semiconductor material and the first elastomer are subjected to a dynamic intermolecular bonding by a hydrogen bond and a thin film transistor array and an electronic device including the same.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.