Laser diode driver circuit techniques
US11075502B2 · kind B2 · utility
1Cited by
43References
21Claims
0Family size
Assignee
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Key dates
| Filing date | Aug 29, 2019 |
| Grant date | Jul 27, 2021 |
| Priority date | — |
| Expiry date | Oct 21, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/4025
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Techniques to achieve higher power/shorter pulses with a laser diode. By initially applying a static reverse bias across the laser diode, the laser diode can turn on at a larger inductor current. When the laser diode is initially reverse biased, depletion charge and diffusion charge can be populated before the laser diode will lase. This causes the laser diode to initially turn on at a larger inductor current, which will reduce the rise time, thereby achieving higher power/shorter pulses.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.