Photon detector, method for producing a photon detector, and x-ray apparatus
US11076822B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 20, 2019 |
| Grant date | Aug 3, 2021 |
| Priority date | — |
| Expiry date | Jan 19, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/811
- WIPO fieldEnvironmental technology
- WIPO sectorChemistry
Abstract
A photon detector includes at least one sensor element, formed by a semiconductor material and sensitive to incident radiation, forming a pixel array including sensor pixels; and a detector circuit, situated after the sensor element in the direction of incident radiation, to detect charge carriers generated in the semiconductor material as a result of radiation. The detector circuit includes an integrated circuit with detector pixels in signal communication contact with the sensor pixels; and an enclosure surrounding the integrated circuit and in which the integrated circuit is embedded, and on which is formed on a pixel face facing the sensor element. A contact redistribution layer is formed, in which contact pads are formed for signal-communicatively connecting the detector pixels to the correspondingly assigned sensor pixels, and also conductor tracks are formed for connecting the contact pads to the detector pixels of the integrated circuit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.