Metal oxynitride thin film, process for producing metal oxynitride thin film, and capacitor element
US11078123B2 · kind B2 · utility
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11Claims
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Key dates
| Filing date | Nov 9, 2018 |
| Grant date | Aug 3, 2021 |
| Priority date | — |
| Expiry date | Feb 22, 2039 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC04B2235/95
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A metal oxynitride thin film having a perovskite structure, in which the metal oxynitride thin film has a composition represented by a compositional formula A1+αBOx+αNy wherein α is larger than zero and 0.300 or less, x+α is larger than 2.450, and y is 0.300 or more and 0.700 or less, an AO structure having a layered structure parallel to a plane perpendicular to a c-axis of the perovskite structure and having a composition represented by a general formula AO, and the AO structure is bonded with the perovskite structure and incorporated in the perovskite structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.