MRAM reference current
US11081155B2 · kind B2 · utility
2Cited by
8References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 4, 2019 |
| Grant date | Aug 3, 2021 |
| Priority date | — |
| Expiry date | Jun 4, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A reference circuit for generating a reference current includes a plurality of resistive elements including at least one magnetic tunnel junction (MTJ). A control circuit is coupled to a first terminal of the at least one MTJ and is configured to selectively flow current through the at least one MTJ in the forward and inverse direction to generate a reference current.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.