Semiconductor device and method of manufacture
US11081350B2 · kind B2 · utility
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2References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 18, 2019 |
| Grant date | Aug 3, 2021 |
| Priority date | — |
| Expiry date | Nov 18, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/30608
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device and method of manufacture are provided. After a patterning of a middle layer, the middle layer is removed. In order to reduce or prevent damage to other underlying layers exposed by the patterning of the middle layer and intervening layers, an inhibitor is included within an etching process in order to inhibit the amount of material removed from the underlying layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.