Patent · US Active

Plasma etching method

US11081361B2 · kind B2 · utility

0Cited by
2References
3Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJul 25, 2019
Grant dateAug 3, 2021
Priority date—
Expiry dateJul 25, 2039

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY02P70/50
  • WIPO fieldBasic materials chemistry
  • WIPO sectorChemistry

Abstract

Provided is a plasma etching method comprising supplying both hexafluoroisopropanol (HFIP) gas and argon (Ar) gas to a plasma chamber receiving an etching target therein, thereby to plasma-etch the etching target.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.