Insulated gate bipolar transistor device and method for manufacturing the same
US11081575B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 17, 2019 |
| Grant date | Aug 3, 2021 |
| Priority date | — |
| Expiry date | Jan 17, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/117
Abstract
An insulated gate bipolar transistor (IGBT) device and a method for manufacturing the same are provided. The present disclosure relates to power semiconductor devices. In order to relieve the problem of wafer warping caused by trench stress in an IGBT manufacturing process without affecting other performance parameters of the IGBT, it provides the following technical solution: optimizing the design of arrangement densities and arrangement regions of device trenches. The present disclosure can alleviate the problem of wafer warping caused by trench stress in the IGBT manufacturing process, improve the product yield of IGBT chips, and enhance the latch-up immunity of the IGBT, so that the IGBT is more robust and durable.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.