Patent · US Active

Protection method for through-holes of a semiconductor wafer

US11081615B2 · kind B2 · utility

1Cited by
2References
9Claims
0Family size

Assignee

Inventors

Key dates

Filing dateAug 31, 2020
Grant dateAug 3, 2021
Priority date
Expiry dateAug 31, 2040

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY02E10/544

Abstract

A protection method for through-holes of a semiconductor wafer having the steps: providing a semiconductor wafer, and comprising a plurality of solar cell stacks, wherein each solar cell stack has a Ge substrate forming a bottom side of the semiconductor wafer, a Ge subcell, and at least two III-V subcells in the order mentioned, as well as at least one through-hole, extending from the top side to the bottom side of the semiconductor wafer, with a continuous side wall and a circumference that is oval in cross section; applying a photoresist layer to a top side of the semiconductor wafer and to at least one region of the side wall of the through-hole, said region adjoining the top side, and applying an organic filler material by means of a printing process to a region of the top side, said region comprising the through-hole, and into the through-hole.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.