Method of producing a semiconductor component

US11081620B2 · kind B2 · utility

Assignee

• Osram OLED GMBH · DE

Inventors

• Andreas Plössl · Regensburg, DE
• Norwin von Malm · Nittendorf, DE
• Dominik Scholz · Regensburg, DE
• Christoph Schwarzmaier · Regensburg, DE
• Martin Rudolf Behringer · Regensburg, DE
• Alexander F. Pfeuffer · Regensburg, DE

Key dates

• Filing date: Dec 15, 2017
• Grant date: Aug 3, 2021
• Expiry date: Dec 15, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/01

Abstract

A method of producing a semiconductor component includes applying an auxiliary carrier at a first side of a semiconductor body, the auxiliary carrier having a first lateral coefficient of thermal expansion, and applying a connection carrier at a second side of the semiconductor body facing away from the auxiliary carrier, the connection carrier having a second lateral coefficient of thermal expansion, wherein the semiconductor body is grown on a growth substrate different from the auxiliary carrier, the first and the second lateral coefficient of thermal expansion differ by at most 50%, and the growth substrate is removed prior to application of the auxiliary carrier.