Optical resonator with localized ion-implanted voids
US11081859B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 30, 2019 |
| Grant date | Aug 3, 2021 |
| Priority date | — |
| Expiry date | Dec 31, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/02
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A high Q whispering gallery mode resonator with ion-implanted voids is described. A resonator device includes a resonator disk formed of an electrooptic material. The resonator disk includes a top surface, a bottom surface substantially parallel to the top surface, and a side structure between the top surface and the bottom surface. The side structure includes an axial surface along a perimeter of the resonator disk, where a midplane passes through the axial surface dividing the axial surface into symmetrical halves. The whispering gallery mode resonator disk includes voids localized at a particular depth from the top surface. At least one of the voids localized at the particular depth from the top surface is located at an outer extremity towards the perimeter of the resonator disk. The resonator device can further include a first electrode on the top surface and a second electrode on the bottom surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.