Amplifier devices with reflection absorption
US11082016B2 · kind B2 · utility
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16References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 15, 2019 |
| Grant date | Aug 3, 2021 |
| Priority date | — |
| Expiry date | Jul 31, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F2200/451
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A radio frequency (RF) amplifier configured to operate at a fundamental frequency (f0) includes a transistor with a transistor output, an output matching network coupled to the transistor output, and a reflection absorption circuit. The output matching network includes an output path device connected between the transistor output and an output of the RF amplifier. The reflection absorption circuit is coupled between the transistor output and the output path device, and is configured to absorb reflected signal energy from the output path device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.