Silicon etchant with high Si/SiO2 etching selectivity and application thereof
US11084981B2 · kind B2 · utility
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Key dates
| Filing date | Jan 15, 2020 |
| Grant date | Aug 10, 2021 |
| Priority date | — |
| Expiry date | Jan 15, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32134
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A silicon etchant with high Si/SiO2 etching selectivity and its application are disclosed. The silicon etchant comprises at least one ketal and at least one quaternary ammonium hydroxide compound. The weight percentage of the ketal is 20˜99 wt. % based on the total weight of the etchant and the weight percentage of the quaternary ammonium hydroxide compound is 0.1˜10 wt. % based on the total weight of the etchant.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.