Patent · US Active

Method for etching the surface of aluminum fragments, aluminum fragments with an etched surface and material composites containing such fragments

US11085117B2 · kind B2 · utility

0Cited by
1References
7Claims
0Family size

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Key dates

Filing dateJan 9, 2017
Grant dateAug 10, 2021
Priority date
Expiry dateApr 26, 2037

Classification

  • Technology area (CPC C)Chemistry; Metallurgy
  • CPC primaryC08K2003/0812
  • WIPO fieldMacromolecular chemistry, polymers
  • WIPO sectorChemistry

Abstract

A method for etching fragments of aluminum or an aluminum alloy comprising the steps of: a. providing a hydrochloric acid solution in a trough-shaped container; b. inoculating the hydrochloric acid solution by chemically dissolving an amount of aluminum to produce an etching solution; c. adding the fragments to the etching solution immediately after the inoculation; d. etching the fragments for 0.5 to 10 minutes while stirring in such a way that the fragments are entrained by the motion of the etching solution; e. stopping the etching by diluting the etching solution with water; f. removing the etched fragments; g. repeatedly rinsing the fragments with water and h. rinsing the fragments with an organic desiccant. An etched fragment of aluminum or an aluminum alloy and also to a composite material comprising etched fragments.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.