Substrates employing surface-area amplification, for use in fabricating capacitive elements and other devices
US11087927B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jan 10, 2020 |
| Grant date | Aug 10, 2021 |
| Priority date | — |
| Expiry date | Jan 10, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/665
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A substrate that includes a base layer having a first principal surface defining a plurality of first trenches and intervening first lands, and a cover layer provided over the first principal surface of the base layer and covering the first trenches and first lands substantially conformally, wherein the surface of the cover layer remote from the first principal surface of the base layer comprises a plurality of second trenches and intervening second lands defined at a smaller scale than the first trenches and first lands. The substrate may be used to fabricate a capacitive element in which thin film layers are provided and conformally cover the second trenches and second lands of the cover layer, to create a metal-insulator-metal structure having high capacitance density.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.