Oxide semiconductor layer and preparation method thereof, device, substrate and means
US11087978B2 · kind B2 · utility
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16Claims
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Key dates
| Filing date | Jul 12, 2019 |
| Grant date | Aug 10, 2021 |
| Priority date | — |
| Expiry date | Jul 12, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present disclosure provides an oxide semiconductor layer and a preparation method thereof, device, substrate, and means, and belongs to the field of semiconductor technologies. The method includes: forming an oxide semiconductor layer having multiply types of regions on a substrate, at least two types of the multiple types of regions having different thicknesses, and adjusting an oxygen content of at least one type of regions in the multiply types of regions, so that the oxygen content and the thickness in the multiple types of regions are positively correlated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.