Semiconductor device and production method therefor
US11088042B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 2, 2018 |
| Grant date | Aug 10, 2021 |
| Priority date | — |
| Expiry date | Aug 29, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3511
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The objective of the present invention is to provide a technique that ensures conduction between a gate terminal of a semiconductor switching element and a wiring layer in a semiconductor device formed with a wiring layer inside a ceramic layer. This semiconductor device comprises: a wiring layer that is inside a ceramic layer formed above an insulation layer; and a metal layer for connecting terminals from the semiconductor switching element other than the gate terminal. The wiring layer and the gate terminal from the semiconductor switching element are connected electrically via a connection part formed from a conductive material. The connection part protrudes more than the metal layer toward the semiconductor switching element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.