Compound semiconductor device and fabrication method therefor, and amplifier
US11088044B2 · kind B2 · utility
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12Claims
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Key dates
| Filing date | Nov 19, 2019 |
| Grant date | Aug 10, 2021 |
| Priority date | — |
| Expiry date | Nov 19, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/256
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A compound semiconductor device includes a compound semiconductor stack structure, a protective film provided on the compound semiconductor stack structure and containing titanium oxide, and a polycrystalline diamond film provided on the protective film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.