Semiconductor device and method for manufacturing same
US11088074B2 · kind B2 · utility
0Cited by
6References
5Claims
0Family size
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Key dates
| Filing date | Apr 4, 2017 |
| Grant date | Aug 10, 2021 |
| Priority date | — |
| Expiry date | Apr 4, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/47
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A multi-finger transistor including plural control electrodes (2), plural first electrodes (3), and plural second electrodes (4) is provided on a semiconductor substrate (1). A resin film (14,15) covers the transistor. A first wiring (8) electrically connecting the plural first electrodes (3) to one other is provided on the resin film (14,15). The resin film (14,15) covers contact portions between the first wiring (8) and the plural first electrodes (3). A first hollow structure (16) sealed with the resin film (14,15) is provided around the plural control electrodes (2) and the plural second electrodes (4).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.