Patent · US Active

Semiconductor device

US11088118B2 · kind B2 · utility

0Cited by
1References
9Claims
0Family size

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Key dates

Filing dateNov 30, 2017
Grant dateAug 10, 2021
Priority date
Expiry dateApr 20, 2038

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/1815
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

According to an embodiment, a semiconductor device includes a first metal plate, a second metal plate, and two or more semiconductor units. The two or more semiconductor units are disposed on the first metal plate. The each of the two or more semiconductor units includes a first metal member, a second metal member, and a semiconductor element. The first metal member has a first connection surface connected to the first major surface. The second metal member has a second connection surface connected to the second major surface. The semiconductor element includes an active region having surfaces respectively opposing the first connection surface and the second connection surface. A surface area of the first connection surface is greater than a surface area of the surface of the active region opposing the first connection surface. A surface area of the second connection surface is greater than a surface area of the surface of the active region opposing the second connection surface.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.