Solid-state image sensor, photoelectric conversion film, electron blocking layer, imaging apparatus, and electronic device
US11088207B2 · kind B2 · utility
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Key dates
| Filing date | May 25, 2016 |
| Grant date | Aug 10, 2021 |
| Priority date | — |
| Expiry date | Aug 17, 2036 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/549
- WIPO fieldOrganic fine chemistry
- WIPO sectorChemistry
Abstract
The present technology relates to a solid-state image sensor, a photoelectric conversion film, an electron blocking layer, an imaging apparatus, and an electronic device that can appropriately photoelectrically convert light of specific wavelengths with high spectral characteristics and high photoelectric conversion efficiency. A photoelectric conversion layer or an electron blocking layer is configured with a photoelectric conversion film made of only a compound represented by Chemical Formula (1). The present technology can be applied to a solid-state image sensor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.