Patent · US Active

Crystal, crystalline oxide semiconductor, semiconductor film containing crystalline oxide semiconductor, semiconductor device including crystal and/or semiconductor film and system including semiconductor device

US11088242B2 · kind B2 · utility

1Cited by
2References
21Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMar 30, 2020
Grant dateAug 10, 2021
Priority date
Expiry dateMar 30, 2040

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D30/60
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

As an aspect of an embodiment, a crystal contains a metal oxide containing Ga and Mn and having a corundum structure.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.