Semiconductor device with integrated clamp diode
US11088273B2 · kind B2 · utility
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1References
15Claims
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Assignee
Inventors
Key dates
| Filing date | Dec 5, 2019 |
| Grant date | Aug 10, 2021 |
| Priority date | — |
| Expiry date | Dec 10, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/611
Abstract
The present disclosure relates to a semiconductor device, and associated method of manufacture. The semiconductor device includes, MOSFET integrated with a p-n junction, the p-n junction arranged as a clamping diode across a source contact and a drain contact of the MOSFET. The MOSFET defines a first breakdown voltage and the clamping diode defines a second breakdown voltage, with the first breakdown voltage being greater than the second breakdown voltage so that the clamp diode is configured and arranged to receive a low avalanche current and the MOSFET is configured and arranged to receive a high avalanche current.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.