Power MOSFETs structure
US11088277B2 · kind B2 · utility
1Cited by
1References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 19, 2020 |
| Grant date | Aug 10, 2021 |
| Priority date | — |
| Expiry date | May 19, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/813
Abstract
A semiconductor device is provided. The semiconductor device includes a substrate, a source region, a drain region, a filed plate and a gate electrode. The source region is of a first conductivity type located at a first side within the substrate. The drain region is of the first conductive type located at a second side within the substrate opposite to the first side. The field plate is located over the substrate and between the source region and the drain region. A portion of the gate electrode is located over the field plate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.