Display apparatus and method of manufacturing the same
US11088284B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 15, 2018 |
| Grant date | Aug 10, 2021 |
| Priority date | — |
| Expiry date | Nov 22, 2038 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A display apparatus includes: a substrate on which a first area, a second area spaced apart from the first area, and a bending area between a first area and a second area and bent along a bending axis are defined; a first thin-film transistor (“TFT”) and a second TFT; and a first conductive layer and a second conductive layer. The first TFT includes: a first active layer including polycrystalline silicon; a first gate electrode; and a first electrode disposed at a level which is the same as a level of the first conductive layer, and the second TFT includes: a second active layer including an oxide semiconductor; a second gate electrode; and a second electrode disposed at a level which is the same as a level of the second conductive layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.