Thin film transistor and manufacturing method thereof, array substrate and display device
US11088287B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jun 3, 2019 |
| Grant date | Aug 10, 2021 |
| Priority date | — |
| Expiry date | Jul 5, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/0231
Abstract
A TFT and a method for manufacturing the TFT, an array substrate, and a display device are provided. An active layer of the TFT includes a channel region, a first conductive region and a second conductive region, and the channel region is arranged between the first conductive region and the second conductive region. The channel region includes a first side and a second side, the first side is opposite to the second side, the first side is in contact with a third side of the first conductive region, the second side is in contact with a fourth side of the second conductive region, and a length of the first side is greater than a length of the third side.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.