Patent · US Active

Laser diode device

US11088513B2 · kind B2 · utility

0Cited by
1References
18Claims
0Family size

Assignee

Inventors

Key dates

Filing dateNov 12, 2019
Grant dateAug 10, 2021
Priority date
Expiry dateDec 17, 2039

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01S5/042
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

A laser diode device includes a thermally conductive substrate that has a planar surface for dissipating ambient heat, and a plurality of laser diodes situated thereon, each of which includes at least one epitaxial layer that is situated on a side of the laser diode facing the substrate. The laser diodes are each electrically activated via an electrically conductive coating situated between the at least one epitaxial layer and the substrate. The substrate includes a plurality of metallized cavities that accommodate the plurality of laser diodes so that the plurality of laser diodes have an essentially uniform height above the substrate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.