Small pixel high dynamic range pixel sensor
US11089244B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 9, 2019 |
| Grant date | Aug 10, 2021 |
| Priority date | — |
| Expiry date | Apr 14, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8037
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
An imaging array and a pixel sensor are disclosed. One of the pixel sensors in the imaging array includes a photodiode having a cathode connected to an electron storage node and an anode connected to a hole storage node. An overflow path connects the electron storage node via an overflow gate that allows electrons to leak off of the electron storage node into the overflow path if the electron storage node has a potential less than a leakage potential. A floating diffusion node is connected to the electron storage node by a transfer gate and the overflow path by an overflow path gate. A hole storage node reset gate connects the hole storage node to ground. A hole storage capacitor is connected between the hole storage node and ground, and an overflow path coupling capacitor connects the hole storage node to the overflow path.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.