Sputtering apparatus and sputtering method
US11094515B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 6, 2017 |
| Grant date | Aug 17, 2021 |
| Priority date | — |
| Expiry date | Mar 15, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02266
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A sputtering apparatus has a vacuum chamber capable of arranging a target material and a substrate therein so as to face each other, a DC power supply capable of electrically being connected to the target material, and a pulsing unit pulsing electric current flowing in the target material from the DC power supply, in which plasma is generated in the vacuum chamber to form a thin film on the substrate, including an ammeter measuring electric current flowing in the pulsing unit from the DC power supply, a power supply controller performing feedback control of the DC power supply so that a current value measured by the ammeter becomes a prescribed value and a pulse controller indicating a pulse cycle shifted from a control cycle of the DC power supply by the power supply controller to the pulsing unit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.