Self-aligned insulated film for high-K metal gate device
US11094545B2 · kind B2 · utility
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11References
20Claims
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Key dates
| Filing date | Jul 16, 2019 |
| Grant date | Aug 17, 2021 |
| Priority date | — |
| Expiry date | Jul 16, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28088
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method forming a gate dielectric over a substrate, and forming a metal gate structure over the semiconductor substrate and the gate dielectric. The metal gate structure includes a first metal material. The method further includes forming a seal on sidewalls of the metal gate structure. The method further includes forming a dielectric film on the metal gate structure, the dielectric film including a first metal oxynitride comprising the first metal material and directly on the metal gate structure without extending over the seal formed on sidewalls of the metal gate structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.