Semiconductor structure and fabrication method thereof
US11094591B2 · kind B2 · utility
Assignees
Inventor
Key dates
| Filing date | Jul 25, 2018 |
| Grant date | Aug 17, 2021 |
| Priority date | — |
| Expiry date | Nov 22, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Semiconductor structures and fabrication methods are provided. An exemplary semiconductor structure includes a semiconductor substrate having a plurality of cell regions. Each of the cell regions includes a device region, a protection region surrounding the device region and an isolation region surrounding the device region and the protection region. The semiconductor structure also includes a device structure on the semiconductor substrate in the device region; a protection ring structure on the semiconductor substrate in the protection region; an isolation structure on the semiconductor substrate in the isolation region; a passivation layer on the protection ring structure, the device structure and the isolation structure; and a trench passing through the passivation layer in the isolation region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.