Semiconductor chip contact structure, device assembly, and method of fabrication
US11094614B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 23, 2019 |
| Grant date | Aug 17, 2021 |
| Priority date | — |
| Expiry date | Jan 7, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/127
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device structure may include a semiconductor device, disposed at least in part in a semiconductor substrate, and a first insulator layer, disposed on a surface of the semiconductor device, and comprising a first contact aperture, disposed within the first insulator layer. The semiconductor device structure may also include a first contact layer, comprising a first electrically conductive material, disposed over the insulator layer, and being in electrical contact with the semiconductor device through the first contact aperture, and a second insulator layer, disposed over the first contact layer, wherein the second insulator layer further includes a second contact aperture, displaced laterally from the first contact aperture, by a first distance. The semiconductor device structure may further include a second contact layer, comprising a second electrically conductive material, disposed over the second insulator layer, and electrically connected to the semiconductor device through the first and second contact aperture.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.