Semiconductor storage device
US11094698B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 14, 2020 |
| Grant date | Aug 17, 2021 |
| Priority date | — |
| Expiry date | Sep 14, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/488
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor storage device according to the present embodiment includes a plurality of first wires provided above a surface of a semiconductor substrate to extend in a first direction, and a plurality of second wires provided above the first wires to extend in a second direction crossing the first direction. A plurality of capacitor elements are arranged every other intersection region among intersection regions between the first wires and the second wires as viewed from above the surface of the semiconductor substrate. A plurality of transistors are provided above the capacitor elements to correspond thereto, respectively. A first distance between two of the capacitor elements, which are adjacent to each other in the first direction, is narrower than a second distance between two of the capacitor elements, which are adjacent to each other in the second direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.