Photoelectric detector, manufacturing method thereof, and detection device
US11094738B2 · kind B2 · utility
1Cited by
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20Claims
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Key dates
| Filing date | Jul 10, 2019 |
| Grant date | Aug 17, 2021 |
| Priority date | — |
| Expiry date | Oct 30, 2039 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N2223/505
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The embodiments of the present disclosure provide a photoelectric detector, a method for manufacturing the photoelectric detector, and a detection device. The method for manufacturing the photoelectric detector includes: forming a thin film transistor array layer on a base substrate; forming an organic layer on a side of the thin film transistor array layer facing away from the base substrate; and patterning the organic layer to form a first via hole which enables a signal transmission layer in the thin film transistor array layer to be exposed; and depositing a photoelectric conversion device in the first via hole.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.