Structure and formation method of semiconductor device with magnetic element covered by polymer material
US11094776B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Jun 5, 2019 |
| Grant date | Aug 17, 2021 |
| Priority date | — |
| Expiry date | Jul 11, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/05
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A structure and a formation method of a semiconductor device are provided. The method includes forming a passivation layer over a semiconductor substrate. The method also includes forming a magnetic element over the passivation layer. The method further includes forming an isolation layer over the magnetic element and the passivation layer. The isolation layer includes a polymer material. In addition, the method includes forming a conductive line over the isolation layer, and the conductive line extends across the magnetic element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.