Silicon carbide substrate, method for manufacturing silicon carbide substrate, and method for manufacturing silicon carbide semiconductor device
US11094835B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Feb 20, 2018 |
| Grant date | Aug 17, 2021 |
| Priority date | — |
| Expiry date | Feb 20, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/834
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
It is an object of the present invention to provide a silicon carbide substrate having a low defect density that does not contaminate a process device and a silicon carbide semiconductor device including the silicon carbide substrate. A silicon carbide substrate according to the present invention is a silicon carbide substrate including: a substrate inner portion; and a substrate outer portion surrounding the substrate inner portion, wherein non-dopant metal impurity concentration of the substrate inner portion is 1×1016 cm−3 or more, and a region of the substrate outer portion at least on a surface side thereof is a substrate surface region in which the non-dopant metal impurity concentration is less than 1×1016 cm−3.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.