Semiconductor device with through holes on bonding parts and bonding method thereof
US11094862B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 5, 2019 |
| Grant date | Aug 17, 2021 |
| Priority date | — |
| Expiry date | Mar 1, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/0364
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
A bonding method of a semiconductor device is disclosed. The method includes steps of forming a plurality of holes on two bonding parts of a main substrate, respectively; disposing a semiconductor device on the main substrate, and aligning the two bonding parts with two conduction parts of the semiconductor device; aligning a laser to the conduction parts and operating the laser to emit a laser beam from a lower part of the main substrate, wherein the laser beam passes through the holes of the bonding part to strike on the conduction part, so as to melt each conduction part to bond with the bonding part. With configuration of the holes, the conduction parts and the bonding part can be smoothly bonded by using laser, so as to achieve the purpose of transferring the semiconductor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.