Apparatus and method for profiling a beam of a light emitting semiconductor device
US11099063B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 10, 2014 |
| Grant date | Aug 24, 2021 |
| Priority date | — |
| Expiry date | Apr 29, 2035 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01J2001/4261
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Methods and apparatus (100) for profiling a beam of a light emitting semiconductor device. The apparatus comprises a light emitting semiconductor device (102) comprising an active region (108) formed on a substrate (104) and configured to generate light when a suitable electrical current is applied to contacts on an upper surface of the device and a light emitting surface (110) defined by a lower surface of the substrate opposite the contacts. The apparatus further comprises a transmission medium (112) comprising a first surface (114) in contact with at least part of the light emitting surface of the semiconductor device and a diffusion surface (116), opposite the first surface, and configured to diffuse light emitted from the micro-LED and transmitted through the transmission medium.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.