Semiconductor device
US11099244B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 18, 2019 |
| Grant date | Aug 24, 2021 |
| Priority date | — |
| Expiry date | Jul 12, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N52/101
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A semiconductor device includes a semiconductor substrate 10 of a first conductivity type, a vertical Hall element 100 provided on the semiconductor substrate 10, and an excitation conductor 200 provided directly above the vertical Hall element 100 with an intermediation of an insulating film 30. The vertical Hall element 100 includes a semiconductor layer 101 of a second conductivity type provided on the semiconductor substrate 10, and a plurality of electrodes 111 through 115 each constituted from a high-concentration second conductivity type impurity region and provided on the surface of the semiconductor layer 101 along a straight line. A ratio WC/WH between a width WC of the excitation conductor 200 and a width WH of each of the plurality of electrodes 111 through 115 satisfies 0.3≤WC/WH≤1.0.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.