Ferroelectric domain regulated optical readout mode memory and preparing method thereof

US11100971B2 · kind B2 · utility

Assignee

• Shanghai Institute of Technical Physics Chinese Academy of Sciences · CN

Inventors

• Jianlu Wang · Shanghai, CN
• Guangjian Wu · Shanghai, CN
• Xudong Wang · Kirkland, US
• Hong Shen · Omaha, US
• Tie Lin · Shanghai, CN
• Xiangjian Meng · Shanghai, CN
• Junhao Chu · Shanghai, CN

Key dates

• Filing date: Mar 19, 2020
• Grant date: Aug 24, 2021
• Expiry date: Mar 19, 2040

Classification

• Technology area (CPC G): Physics
• CPC primary: G11B2007/25716
• WIPO field: Computer technology
• WIPO sector: Electrical engineering

Abstract

A ferroelectric domain regulated optical readout mode memory and a preparing method thereof. The memory has such a structure that a two-dimensional semiconductor and a ferroelectric film layer are sequentially arranged on a conductive substrate. The method for preparing the memory includes the steps of preparing the two-dimensional semiconductor on the conductive substrate, preparing a ferroelectric film, then writing a periodic positive-reverse domain structure into the ferroelectric film on the two-dimensional semiconductor by using a piezoresponse force microscopy technology, and regulating a photoluminescent intensity of the two-dimensional semiconductor WS2 by using a ferroelectric domain. A fluorescent picture taken by a fluorescent camera shows light and dark areas corresponding to polarization directions, the light and dark areas represent an on state (‘1’) and an off state (‘0’) of the memory respectively, and accordingly the purpose of storage is achieved.