Patent · US Active

On-chip supercapacitor with silicon nanostructure

US11101082B2 · kind B2 · utility

0Cited by

2References

11Claims

0Family size

Assignee

University of South-Eastern Norway · NO

Inventors

Xuyuan Chen · Sandvika, NO
Pai Lu · Daxi District, TW
Per Alfred ØHLCKERS · Sandvika, NO

Key dates

Filing date	Mar 6, 2018
Grant date	Aug 24, 2021
Priority date	—
Expiry date	Jul 10, 2038

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY02E60/13
WIPO fieldElectrical machinery, apparatus, energy
WIPO sectorElectrical engineering

Abstract

An on-chip supercapacitor has an electrode that includes one-dimensional silicon nano structures coated with a first layer of titanium nitride. The on-chip supercapacitor also includes a second layer of manganese dioxide deposited on the first layer. An associated method of providing an on-chip supercapacitor electrode on a silicon substrate includes providing a plurality of one-dimensional silicon nanostructures on a substrate, coating the one-dimensional silicon nanostructures with a first layer of titanium nitride, and coating a second layer of manganese dioxide onto the first layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.