Diode and fabrication method thereof, array substrate and display panel
US11101304B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 15, 2019 |
| Grant date | Aug 24, 2021 |
| Priority date | — |
| Expiry date | Oct 15, 2039 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A diode and its fabrication method are provided. The diode includes a substrate, a buffer layer on a side of the substrate, a first film layer, a second film layer and a third film layer. The first film layer is a polycrystalline silicon film layer; the second film layer is an amorphous silicon film layer; and the third film layer is one of the polycrystalline silicon film layer and the amorphous silicon film layer. The diode at least includes a first portion, a second portion, a third portion, a first electrode, and a second electrode. The first portion is located in the first film layer; the second portion is located in the second film layer; and the third portion is located in the third film layer. The first electrode is electrically connected to the first portion, and the second electrode is electrically connected to the third portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.