Back side illumination image sensors and electronic device including the same
US11101314B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 29, 2020 |
| Grant date | Aug 24, 2021 |
| Priority date | — |
| Expiry date | Feb 20, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8063
Abstract
In some example embodiments, a back side illumination (BSI) image sensor may include a pixel configured to generate electrical signals in response to light incident on a back side of a substrate. In some example embodiments, the pixel includes, a photodiode, a device isolation film adjacent to the photodiode, a dark current suppression layer above the photodiode, a light shield grid above the photodiode and including an opening area of 1 to 15% of an area of the pixel, a light shielding filter layer above the light shield grid, a planarization layer above the light shielding filter layer, a lens above the planarization layer, and/or an anti-reflective film between the photodiode and the lens.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.