Semiconductor device and forming method thereof

US11101362B2 · kind B2 · utility

Assignees

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW
• National Taiwan University · TW

Inventors

• Miin-Jang Chen · Hsinchu, TW
• Sheng Yi · Taipei, TW
• Chen-Hsuan Lu · Taipei, TW

Key dates

• Filing date: Dec 26, 2018
• Grant date: Aug 24, 2021
• Expiry date: Dec 26, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/691

Abstract

A device includes a substrate, a first zirconium-containing oxide layer, a first metal oxide layer and a top electrode. The first zirconium-containing oxide layer is over a substrate and having ferroelectricity or antiferroelectricity. The first metal oxide layer is in contact with the first zirconium-containing oxide layer. The first metal oxide layer has a thickness less than a thickness of the first zirconium-containing oxide layer. The top electrode is over the first zirconium-containing oxide layer.