Method of forming crystallized semiconductor layer, method of fabricating thin film transistor, thin film transistor, and display apparatus
US11101368B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Mar 5, 2019 |
| Grant date | Aug 24, 2021 |
| Priority date | — |
| Expiry date | Mar 21, 2039 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P80/30
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a crystallized semiconductor layer includes forming an insulating crystallization inducing layer on a base substrate; forming a semiconductor material layer on a side of the insulating crystallization inducing layer away from the base substrate by depositing a semiconductor material on the insulating crystallization inducing layer, the semiconductor material being deposited at a deposition temperature that induces crystallization of the semiconductor material; forming an alloy crystallization inducing layer including an alloy on a side of the semiconductor material layer away from the insulating crystallization inducing layer; and annealing the alloy crystallization inducing layer to further induce crystallization of the semiconductor material to form the crystallized semiconductor layer. Annealing the alloy crystallization inducing layer is performed to enrich a relatively more conductive element of the alloy to a side away from the base substrate, thereby forming an annealed crystallization inducing layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.